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dc.contributor.authorChen, WYen_US
dc.contributor.authorKo, SHen_US
dc.contributor.authorHsieh, THen_US
dc.contributor.authorChang, FCen_US
dc.contributor.authorWang, YZen_US
dc.date.accessioned2014-12-08T15:17:03Z-
dc.date.available2014-12-08T15:17:03Z-
dc.date.issued2006-03-24en_US
dc.identifier.issn1022-1336en_US
dc.identifier.urihttp://dx.doi.org/10.1002/marc.200500747en_US
dc.identifier.urihttp://hdl.handle.net/11536/12475-
dc.description.abstractThis investigation presents a simultaneous and convenient approach to produce a high-performance polyimide with a low dielectric constant by introducing the octa-acrylated polyhedral oligomeric silsesquioxane (methacrylated-POSS) into a polyimide matrix to form polyimide semi-interpenetrating polymer network (semi-IPN) nanocomposites. The differential scanning calorimetry (DSC) and Fourier-transform infrared (FT-IR) results indicate that the self-curing of methacrylated-POSS and the imidization of polyamic acid (PAA) occurs simultaneously. The morphology of a semi-IPN structure of polyimide[POSS-PI/POSS nanocomposites with POSS nanoparticles embedded inside the matrix is elucidated. The POSS particles are uniform and are aggregated to a size of approximately 50-60 nm inside the polyimide matrix. The interconnected POSS particles are observed at high POSS content. The structure is highly crosslinked, so the PI/POSS nanocomposites have an enhanced glass transition temperature. The high porosity of the PI/POSS nanocomposites markedly reduces the dielectric constant of PI because of the nanometer-scale porous structure of POSS.en_US
dc.language.isoen_USen_US
dc.subjectdielectric propertiesen_US
dc.subjectmorphologyen_US
dc.subjectnanocompositesen_US
dc.subjectpolyimidesen_US
dc.subjectPOSSen_US
dc.subjectsemi-IPNsen_US
dc.titleSimultaneous preparation of PI/POSS semi-IPN nanocompositesen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/marc.200500747en_US
dc.identifier.journalMACROMOLECULAR RAPID COMMUNICATIONSen_US
dc.citation.volume27en_US
dc.citation.issue6en_US
dc.citation.spage452en_US
dc.citation.epage457en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000236600500012-
dc.citation.woscount30-
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