標題: Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer
作者: Chen, P. H.
Chen, Yu An
Chang, L. C.
Lai, W. C.
Kuo, Cheng Huang
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: LED;AZO;e-Beam;Ohmic contact
公開日期: 1-Jul-2015
摘要: Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n(+)-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 x 10(-2) Omega cm(2), which was almost the same as that of as-deposited AZO on n(+)-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n(+)-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process. (C) 2015 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2015.02.020
http://hdl.handle.net/11536/124765
ISSN: 0038-1101
DOI: 10.1016/j.sse.2015.02.020
期刊: SOLID-STATE ELECTRONICS
Volume: 109
起始頁: 29
結束頁: 32
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