標題: Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid
作者: Chang, Kuan-Chang
Tsai, Tsung-Ming
Chang, Ting-Chang
Zhang, Rui
Chen, Kai-Huang
Chen, Jung-Hui
Chen, Min-Chen
Huang, Hui-Chun
Zhang, Wei
Lin, Chih-Yang
Tseng, Yi-Ting
Lin, Hua-Ching
Zheng, Jin-Cheng
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RRAM;SCCO2;ITO;SiO2
公開日期: 1-Jun-2015
摘要: Supercritical carbon dioxide (SCCO2) fluid technology was applied to indium-tin-oxide (ITO) electrode to improve the resistive switching characteristic of silicon oxide RRAM through hydride oxidation for the first time. We found device power consumption can be effectively reduced so that side effects can be also restricted under device operation. By applying SCCO2 fluid, more oxygen ions will be introduced into the ITO electrode and thus the participation of net oxygen ions in the RRAM redox reaction will increase. Fourier transform spectroscopy and X-ray photoelectron spectroscopy were used to confirm hydride oxidation on ITO electrode. Combined with the current fitting results, we proposed a reaction model to explain the improvement of resistive switching in RRAM by SCCO2 fluids.
URI: http://dx.doi.org/10.1109/LED.2015.2426055
http://hdl.handle.net/11536/124787
ISSN: 0741-3106
DOI: 10.1109/LED.2015.2426055
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 36
起始頁: 558
結束頁: 560
Appears in Collections:Articles