標題: Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
作者: Chand, Umesh
Huang, Kuan-Chang
Huang, Chun-Yang
Ho, Chia-Hua
Lin, Chen-Hsi
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 14-May-2015
摘要: The effect of the annealing treatment of a HfO2 resistive switching layer and the memory performance of a HfO2-based resistive random access memory (cross-bar structure) device were investigated. Oxygen is released from HfO2 resistive switching layers during vacuum annealing, leading to unstable resistive switching properties. This oxygen release problem can be suppressed by inserting an Al2O3 thin film, which has a lower Gibbs free energy, between the HfO2 layer and top electrode to form a Ti/Al2O3/HfO2/TiN structure. This device structure exhibited good reliability after high temperature vacuum annealing and post metal annealing (PMA) treatments. Moreover, the endurance and retention properties of the device were also improved after the PMA treatment. (c) 2015 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4921182
http://hdl.handle.net/11536/124812
ISSN: 0021-8979
DOI: 10.1063/1.4921182
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 117
Issue: 18
Appears in Collections:Articles