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dc.contributor.authorChand, Umeshen_US
dc.contributor.authorHuang, Kuan-Changen_US
dc.contributor.authorHuang, Chun-Yangen_US
dc.contributor.authorHo, Chia-Huaen_US
dc.contributor.authorLin, Chen-Hsien_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2015-07-21T08:29:32Z-
dc.date.available2015-07-21T08:29:32Z-
dc.date.issued2015-05-14en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4921182en_US
dc.identifier.urihttp://hdl.handle.net/11536/124812-
dc.description.abstractThe effect of the annealing treatment of a HfO2 resistive switching layer and the memory performance of a HfO2-based resistive random access memory (cross-bar structure) device were investigated. Oxygen is released from HfO2 resistive switching layers during vacuum annealing, leading to unstable resistive switching properties. This oxygen release problem can be suppressed by inserting an Al2O3 thin film, which has a lower Gibbs free energy, between the HfO2 layer and top electrode to form a Ti/Al2O3/HfO2/TiN structure. This device structure exhibited good reliability after high temperature vacuum annealing and post metal annealing (PMA) treatments. Moreover, the endurance and retention properties of the device were also improved after the PMA treatment. (c) 2015 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleInvestigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4921182en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume117en_US
dc.citation.issue18en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000354984500018en_US
dc.citation.woscount0en_US
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