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dc.contributor.authorLuong, Tien-Tungen_US
dc.contributor.authorBinh Tinh Tranen_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorWei, Ting-Weien_US
dc.contributor.authorWu, Yue-Hanen_US
dc.contributor.authorYen, Tzu-Chunen_US
dc.contributor.authorWei, Lin-Lungen_US
dc.contributor.authorMaa, Jer-Shenen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2015-07-21T08:29:38Z-
dc.date.available2015-07-21T08:29:38Z-
dc.date.issued2015-05-01en_US
dc.identifier.issn1738-8090en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s13391-015-4208-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/124836-
dc.description.abstractThe effects of surface pre-treatments and the role of an AN buffer layer for 2H-SiC growth on c-plane sapphire substrates by thermal CVD are investigated. While the crystallinity of SiC directly grown on sapphire substrate always degrades with a hydrogen pre-treatment but improves by optimizing carbonization, the crystallinity of SiC grown on sapphire substrate using an AN buffer grown by MOCVD improves with sufficient time of exposure to the H pre-treatment but always deteriorates with carbonization. Detailed microstructural analysis by phi-scan x-ray diffraction reveals that SiC film grown on sapphire substrate consists of crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60 degrees. A highly oriented hexagonal 2H-SiC film is obtained on low-cost c-plane sapphire substrate by using an AN buffer. 2H-SiC is unambiguously determined not only by phi-scan x-ray diffraction but also by high-resolution transmission electron microscopy. The growth relationship between 2H-SiC and 2H-AlN are coherent due to the favorable bonding of C and Al between SiC and AlN.en_US
dc.language.isoen_USen_US
dc.subjectAlN bufferen_US
dc.subjecthydrogen pre-treatmenten_US
dc.subjectcarbonizationen_US
dc.subjectXRD phi-scanen_US
dc.subject2H-SiCen_US
dc.title2H-Silicon Carbide Epitaxial Growth on c-Plane Sapphire Substrate Using an AlN Buffer Layer and Effects of Surface Pre-Treatmentsen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s13391-015-4208-9en_US
dc.identifier.journalELECTRONIC MATERIALS LETTERSen_US
dc.citation.volume11en_US
dc.citation.spage352en_US
dc.citation.epage359en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentCollege of Photonicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000354828100004en_US
dc.citation.woscount0en_US
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