完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Luong, Tien-Tung | en_US |
dc.contributor.author | Binh Tinh Tran | en_US |
dc.contributor.author | Ho, Yen-Teng | en_US |
dc.contributor.author | Wei, Ting-Wei | en_US |
dc.contributor.author | Wu, Yue-Han | en_US |
dc.contributor.author | Yen, Tzu-Chun | en_US |
dc.contributor.author | Wei, Lin-Lung | en_US |
dc.contributor.author | Maa, Jer-Shen | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2015-07-21T08:29:38Z | - |
dc.date.available | 2015-07-21T08:29:38Z | - |
dc.date.issued | 2015-05-01 | en_US |
dc.identifier.issn | 1738-8090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1007/s13391-015-4208-9 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/124836 | - |
dc.description.abstract | The effects of surface pre-treatments and the role of an AN buffer layer for 2H-SiC growth on c-plane sapphire substrates by thermal CVD are investigated. While the crystallinity of SiC directly grown on sapphire substrate always degrades with a hydrogen pre-treatment but improves by optimizing carbonization, the crystallinity of SiC grown on sapphire substrate using an AN buffer grown by MOCVD improves with sufficient time of exposure to the H pre-treatment but always deteriorates with carbonization. Detailed microstructural analysis by phi-scan x-ray diffraction reveals that SiC film grown on sapphire substrate consists of crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60 degrees. A highly oriented hexagonal 2H-SiC film is obtained on low-cost c-plane sapphire substrate by using an AN buffer. 2H-SiC is unambiguously determined not only by phi-scan x-ray diffraction but also by high-resolution transmission electron microscopy. The growth relationship between 2H-SiC and 2H-AlN are coherent due to the favorable bonding of C and Al between SiC and AlN. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | AlN buffer | en_US |
dc.subject | hydrogen pre-treatment | en_US |
dc.subject | carbonization | en_US |
dc.subject | XRD phi-scan | en_US |
dc.subject | 2H-SiC | en_US |
dc.title | 2H-Silicon Carbide Epitaxial Growth on c-Plane Sapphire Substrate Using an AlN Buffer Layer and Effects of Surface Pre-Treatments | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/s13391-015-4208-9 | en_US |
dc.identifier.journal | ELECTRONIC MATERIALS LETTERS | en_US |
dc.citation.volume | 11 | en_US |
dc.citation.spage | 352 | en_US |
dc.citation.epage | 359 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 光電學院 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | College of Photonics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000354828100004 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |