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dc.contributor.authorZeng, Yupingen_US
dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorHsu, Chingyien_US
dc.contributor.authorNajmzadeh, Mohammaden_US
dc.contributor.authorSachid, Angadaen_US
dc.contributor.authorKapadia, Rehanen_US
dc.contributor.authorYeung, Chunwingen_US
dc.contributor.authorChang, Edwarden_US
dc.contributor.authorHu, Chenmingen_US
dc.contributor.authorJavey, Alien_US
dc.date.accessioned2015-07-21T08:29:18Z-
dc.date.available2015-07-21T08:29:18Z-
dc.date.issued2015-05-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2015.2419232en_US
dc.identifier.urihttp://hdl.handle.net/11536/124841-
dc.description.abstractA type-III (broken gap) band alignment heterojunction vertical in-line InAs/AlSb/GaSb tunnel FET, including a 2-nm-thin AlSb tunneling barrier is demonstrated. The impact of overlap and underlap gate is studied experimentally and supported further by quasi-stationary 2-D TCAD Sentaurus device simulations. Hydrogen silsesquioxane is used as a novel mechanical support structure to suspend the 10-nm-thin InAs drain with enough undercut to be able to demonstrate an overlap gate architecture. The overlap gate InAs/AlSb/GaSb TFET shows an ON current density of 22 mu A/mu m(2) at V-GS = V-DS = 0.4 V and the subthreshold slope is 194 mV/decade at room temperature and 46 mV/decade at 100 K.en_US
dc.language.isoen_USen_US
dc.subjectHeterojunctionen_US
dc.subjectnanofabricationen_US
dc.subjectTCAD simulationen_US
dc.subjecttunneling barrieren_US
dc.subjecttype III (broken gap) band alignmenten_US
dc.subjectvertical in-line tunnel FETen_US
dc.titleQuantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Supporten_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNANO.2015.2419232en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume14en_US
dc.citation.spage580en_US
dc.citation.epage584en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000354453800022en_US
dc.citation.woscount0en_US
Appears in Collections:Articles