Title: | Effects of atomic scale imperfection at the interfaces of CoSi2 and Si (100) on Schottky barrier contacts |
Authors: | Chiou, Chien-Jyun Chiu, Shao-Pin Lin, Juhn-Jong Chou, Yi-Chia 電子物理學系 物理研究所 Department of Electrophysics Institute of Physics |
Issue Date: | 1-Jan-2015 |
Abstract: | We report here the correlation of electrical properties on Schottky barrier contacts and atomic scale imperfections based on the degree of lattice distortion and moire fringes at the interfaces of CoSi2 and Si. The I-V measurements showed that the higher levels of perfection of the interfaces gave better Schottky barrier characteristics and we discuss the implications of the transport property at Schottky barrier contacts. |
URI: | http://dx.doi.org/10.1039/c5ce00655d http://hdl.handle.net/11536/124857 |
ISSN: | 1466-8033 |
DOI: | 10.1039/c5ce00655d |
Journal: | CRYSTENGCOMM |
Volume: | 17 |
Issue: | 23 |
Begin Page: | 4276 |
End Page: | 4280 |
Appears in Collections: | Articles |