標題: | A High-Voltage-Tolerant Stimulator Realized in the Low-Voltage CMOS Process for Cochlear Implant |
作者: | Lin, Kuan-Yu Ker, Ming-Dou Lin, Chun-Yu 生醫電子轉譯研究中心 Biomedical Electronics Translational Research Center |
公開日期: | 1-Jan-2014 |
摘要: | A biomedical stimulator with four high-voltage-tolerant output channels, combined with on-chip positive high voltage generator, is proposed. For the purpose of integration with other circuit blocks into a system-on-chip (SoC) for cochlear implant biomedical applications, this design has been realized with the 1.8-V/3.3-V transistors in a 0.18-mu m CMOS process. This stimulator only needs one single supply voltage of 1.8 V, but the maximum stimulation voltage can be as high as 7 V. The dynamic bias technique and stacked MOS configuration are used to implement this stimulator in the low-voltage CMOS process, without causing the issues of electrical overstress and gate-oxide reliability during circuit operation. |
URI: | http://hdl.handle.net/11536/124893 |
ISBN: | 978-1-4799-3432-4 |
ISSN: | 0271-4302 |
期刊: | 2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) |
起始頁: | 237 |
結束頁: | 240 |
Appears in Collections: | Conferences Paper |