IMPROVEMENT OF RESISTIVE SWITCHING PROPERTIES OF Ti/ZrO2/Pt WITH EMBEDDED GERMANIUM

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Chun-An	en_US
dc.contributor.author	Panda, Debashis	en_US
dc.contributor.author	Tseng, Tseung-Yuen	en_US
dc.date.accessioned	2015-07-21T08:31:27Z	-
dc.date.available	2015-07-21T08:31:27Z	-
dc.date.issued	2014-01-01	en_US
dc.identifier.isbn	978-1-118-77140-2; 978-1-118-77127-3	en_US
dc.identifier.issn	1042-1122	en_US
dc.identifier.uri	http://hdl.handle.net/11536/125007	-
dc.description.abstract	In this study, we construct the Ti/ZrO2/Ge(5nm)/ZrO2/Pt structures with various positions of embedded Ge in ZrO2 films. After depositing a Ge layer, a 600 degrees C rapid thermal annealing is carried out. Compared to other Ge positions, the lowest forming voltage and the most stable resistive behavior are observed in the cell with a Ge layer near the top electrode. The curve fitting of high resistance state and low resistance state shows that Schottky emission in reset process and the ionic conduction during set process. The improved switching properties could be related to the formation of Gerrnanium oxide and the defect concentration reduction after annealing process.	en_US
dc.language.iso	en_US	en_US
dc.title	IMPROVEMENT OF RESISTIVE SWITCHING PROPERTIES OF Ti/ZrO2/Pt WITH EMBEDDED GERMANIUM	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	ADVANCES IN MULTIFUNCTIONAL MATERIALS AND SYSTEMS II	en_US
dc.citation.volume	245	en_US
dc.citation.spage	111	en_US
dc.citation.epage	116	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000350040300010	en_US
dc.citation.woscount	0	en_US
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