Title: DESIGN OF 2xV(DD) LOGIC GATES WITH ONLY 1xV(DD) DEVICES IN NANOSCALE CMOS TECHNOLOGY
Authors: Chiu, Po-Yen
Ker, Ming-Dou
電機學院
College of Electrical and Computer Engineering
Issue Date: 1-Jan-2013
Abstract: The novel 2xV(DD) NOT, NAND, and NOR logic gates have been designed and implemented in a nanoscale CMOS process with only 1xV(DD) devices. With the proposed dynamic source bias technique, the logic gates can be designed to have 2xV(DD) tolerant capability. Thus, the new 2xV(DD) logic gates can be operated under 2xV(DD) voltage environment without suffering the gate-oxide reliability issue.
URI: http://hdl.handle.net/11536/125063
ISBN: 978-1-4799-1166-0
ISSN: 2164-1676
Journal: 2013 IEEE 26TH INTERNATIONAL SOC CONFERENCE (SOCC)
Begin Page: 33
End Page: 36
Appears in Collections:Conferences Paper