標題: Gold-Free Cu-Metallized III-V Solar Cell
作者: Hsu, Ching-Hsiang
Chang, Hsun-Jui
Yu, Hung-Wei
Hong-Quan Nguyen
Ma, Jer-Shen
Chang, Edward Yi
材料科學與工程學系
光電系統研究所
照明與能源光電研究所
電子工程學系及電子研究所
Department of Materials Science and Engineering
Institute of Photonic System
Institute of Lighting and Energy Photonics
Department of Electronics Engineering and Institute of Electronics
關鍵字: Copper-metallization;III-V solar cell;low-cost
公開日期: 1-Jan-2014
摘要: -Au-free, fully Cu-metallized InGaP/InGaAs/Ge triple-junction solar cells using Pd/Ge/Cu as front contact and Pt/Ti/Pt/Cu/Cr as back contact were fabricated and the results are reported for the first time. From the specific contact resistance measurement, these Cu-metallized ohmic contacts have low contact resistance in the order of 10(-6) Omega-cm(2). AES and TEM results clearly show the formation mechanisms of the Cu-metallization ohmic structures, for Pd/Ge/Cu contact, it was due to the formation of Ge diffusion into the GaAs layer, and for the Pt/Ti/Pt/Cu/Cr contact, it was due to high work function of Pt layer, these copper metallized ohmic contacts were quite stable even after 310 degrees C annealing. The I-V curves of the Cu-metallized InGaP/InGaAs/Ge triple-junction solar cells showed similar electrical characteristics to the solar cells with Au-metallized triple junction solar cell. Overall, the Pd/Ge/Cu and Pt/Ti/Pt/Cu ohmic contacts have been successfully applied to the InGaP/InGaAs/Ge triple-junction solar cells and demonstrated excellent performance.
URI: http://hdl.handle.net/11536/125103
ISBN: 978-1-4799-5760-6
ISSN: 
期刊: 2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)
起始頁: 336
結束頁: 338
Appears in Collections:Conferences Paper