標題: The effects of Growth Parameters on the Electrical Properties in InAlN/AlN/GaN High-Electron-Mobility Transistors (HEMTs)
作者: Huang, Wei-Ching
Wong, Yuen-Yee
Liu, Kuan-Shin
Hsieh, Chi-Feng
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: HEMTs;InAlN;GaN;styling;insert
公開日期: 1-Jan-2014
摘要: The electrical properties in the InAlN/AlN/GaN high electron mobility transistor grown by metal-organic vapor deposition (MOCVD) with different growth parameters were investigated in this study. We observed that two-dimensional electron gas (2DEG) channel was influenced by thickness of AlN spacer layer and a stable stage prior to the growth of AlN spacer layer. The TEM images showed the generation of dislocations at interface between AlN/GaN and InAlN/AlN with the thicker AlN spacer layer. These dislocations acted as electron scattering center and degraded the electron mobility in the 2DEG channel. Besides, a too long stable stage also appeared degradation in the electron mobility due to the etching effect of H-2 gas. By optimizing growth parameters, the highest electron mobility of 890 cm(2)/V.s
URI: http://hdl.handle.net/11536/125105
ISBN: 978-1-4799-5760-6
ISSN: 
期刊: 2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)
起始頁: 499
結束頁: 501
Appears in Collections:Conferences Paper