標題: Growth and Fabrication of GaN Light Emitting Diode on Patterned-Sapphire Substrate
作者: Binh-Tinh Tran
Ming, Chen-Hauw
Lin, Kung-Liang
Chen, Hao-Ming
Wang, Ching-Chian
Chen, Chien-Chih
Huang, Chih-Yung
Chung, Chen-Chen
Chang, Edward-Yi
工學院
College of Engineering
公開日期: 1-Jan-2013
摘要: In this study, the growth of GaN-films-based light emitting diodes (LEDs), have been clearly demonstrated on wet-etching patterned sapphire substrate (PSS) and conventional LEDs. The wet-etching PSS LED device showed a significantly higher performance than the conventional LED device. The wet-etching PSS LED device exhibited a leakage current of 9 mA under a bias of 8 V, an external quantum efficiency and output powers of 35.09 % and 19.23 mW under 20 mA injection current as compared to 12 mA, 27.23%, and 15.02 mW of the conventional LED device.
URI: http://dx.doi.org/10.1149/05048.0001ecst
http://hdl.handle.net/11536/125175
ISBN: 978-1-60768-436-7
ISSN: 1938-5862
DOI: 10.1149/05048.0001ecst
期刊: STUDENT POSTERS (GENERAL) - 222ND ECS MEETING/PRIME 2012
Volume: 50
Issue: 48
Appears in Collections:Conferences Paper