1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChiu, Yi-Chiehen_US
dc.contributor.authorChen, Shih-Chengen_US
dc.contributor.authorHuang, Sheng-Yaoen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorGan, Der-Shinen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2015-07-21T08:31:00Z-
dc.date.available2015-07-21T08:31:00Z-
dc.date.issued2013-01-01en_US
dc.identifier.isbn978-1-60768-481-7; 978-1-62332-126-0en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/05329.0001ecsten_US
dc.identifier.urihttp://hdl.handle.net/11536/125177-
dc.description.abstractThe devices composed of Pt/TaON/TiN reveal bipolar switching behavior that shows excellent resistance ratio of 10(2) with operations over 100 DC cycles. The formation/disruption of conducting filaments by oxygen anions migration near/at the TiN electrode was applied to explain the switching behavior. In comparison with Pt/TaON/TiN device, the Cu/TaON/TiN device exhibits reversed bipolar resistive switching characteristic. The switching mechanism of Cu/TaON/TiN device is regarded as the Cu redox reaction and migration in the TaON film. Furthermore, the setting voltage of the Cu/TaON/TiN device is lower than that of the Pt/TaON/TiN device due to the confined conduction path by Cu filaments.en_US
dc.language.isoen_USen_US
dc.titleEffect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devicesen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/05329.0001ecsten_US
dc.identifier.journalSTUDENT POSTERS (GENERAL) - 223RD ECS MEETINGen_US
dc.citation.volume53en_US
dc.citation.issue29en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000354468300001en_US
dc.citation.woscount0en_US
顯示於類別：會議論文


相關內容
Loading...