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dc.contributor.authorKer, MDen_US
dc.contributor.authorChen, SHen_US
dc.contributor.authorChuang, CHen_US
dc.date.accessioned2014-12-08T15:17:09Z-
dc.date.available2014-12-08T15:17:09Z-
dc.date.issued2006-03-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2006.871414en_US
dc.identifier.urihttp://hdl.handle.net/11536/12520-
dc.description.abstractDifferent electrostatic discharge (ESD) protection schemes have been investigated to find the optimal ESD protection design for an analog input/output (I/O) buffer in 0.18-mu m 1.8- and 3.3-V CMOS technology. Three power-rail ESD clamp devices were used in power-rail ESD clamp circuits to compare the protection efficiency in analog I/O applications, namely: 1) gate-driven NMOS; 2) substrate-triggered field-oxide device, and 3) substrate-triggered NMOS with dummy gate. From the experimental results, the pure-diode ESD protection devices and the power-rail ESD clamp circuit with gate-driven NMOS are the suitable designs for the analog I/O buffer in the 0.18-mu m CMOS process. Each ESD failure mechanism was inspected by scanning electron microscopy photograph in all the analog I/O pins. An unexpected failure mechanism was found in the analog I/O pins with pure-diode ESD protection design under ND-mode ESD stress. The parasitic n-p-n bipolar transistor between the ESD clamp device and the guard ring structure was triggered to discharge the ESD current and cause damage under ND-mode ESD stress.en_US
dc.language.isoen_USen_US
dc.subjectanalog I/Oen_US
dc.subjectelectrostatic discharge (ESD)en_US
dc.subjectfailure mechanismen_US
dc.subjectinput/output (I/O) cellen_US
dc.subjectpower-rail ESD clamp deviceen_US
dc.titleESD failure mechanisms of analog I/O cells in 0.18-mu m CMOS technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TDMR.2006.871414en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume6en_US
dc.citation.issue1en_US
dc.citation.spage102en_US
dc.citation.epage111en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000236944800015-
dc.citation.woscount9-
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