标题: | 镓掺杂氧化锌奈米柱金属桥接电阻式记忆体转态特性之研究 Resistive Switching Characteristic of GZO-nanorods Based Conductive Bridge Random Access Memory |
作者: | 辛沛柔 Singh,Pragya 曾俊元 Tseng, Seung-Yuen 电机资讯国际学程 |
关键字: | 导电性桥的随机存取存储器;GZO棒;Conductive Bridge Random Acess Memory;GZO nanorods |
公开日期: | 2015 |
摘要: | Recently, the resistance switching based memory device (RRAM) concept has drawn attention within the scientific community as a potential candidate for non-volatile random access memory. Resistive random access memory has several advantages, such as simple structure, small in size, low power consumption, fast operation speed and high density. In this thesis, the research is focused on Cu based RRAM fabrication with compact GZO nanorods film structure. It will be described in three parts. The first part is Cu/ZnO/ITO structure is fabricated. That device exhibits no switching behavior, because of random diffusion of copper ions. In the second part, Cu/TiW/ZnO/ITO structure is discussed. To control the random diffusion of Cu ions, a TiW barrier layer is fabricated. In the third part, controlling Cu- filament path randomness by GZO nanorods and modification in Ga/Zn molar ratio to get the dense structure for improving the resistive switching characteristics. In this work, 1.5, 2. 2.5and 4% of the Ga/Zn ratio nanorods are used for preparing RRAM. A higher endurance about 10,000 cycles with resistance ratio of HRS/LRS about 400 times are achieved. Therefore, the present device has successfully fabricated and it has a good potential for next generation non- volatile memory application. 电阻式记忆体(RRAM)在非挥发式记忆体的领域已被视为极有浅力的发展项目。电阻式记忆体因其具有简单结构、元件尺寸小、低功率消耗、高操作速度及高密度之特性,上述特性被视为能够在未来取代快闪式记忆体成为主流之记忆体应用。 本论文研究的重点为镓掺杂氧化锌奈米柱应用于铜电极之电阻式记忆体以改善之转态特性。主要可分为三个部分。第一部分为Cu/ZnO/ITO结构,此结构因铜离子于氧化锌导电薄膜之随机扩散使得此结构不具电阻转换之特性。第二部分,我们提出Cu/TiW/ZnO/ITO之结构,为了有效的控制铜离子之随机扩散,加入钛化钨(TiW)合金薄膜作为阻挡层。在第三部分,为了提升元件之转态特性并进一步降低铜灯丝之随机路径,加入 了镓掺杂氧化锌奈米柱,藉由调整Ga/Zn之莫耳比以形成最紧密之奈米柱。在此实验提出 1.5、2、2.5及4 % 之Ga/Zn 比例。最后在电性表现上获得更好的结果,转态次数可达一万次以上,且高低阻态电流差距可达400倍,具有极佳的逻辑判别特性。此研究成功的完成具有潜 力的氧化锌金属桥接式电阻式记忆体,其良好的电性深具在未来非挥发性记忆体应用的 潜 力。 |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT070150293 http://hdl.handle.net/11536/125569 |
显示于类别: | Thesis |