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dc.contributor.author楊子慶en_US
dc.contributor.authorYang, Tzu-Chingen_US
dc.contributor.author孟慶宗en_US
dc.contributor.authorMeng, Chin-Chunen_US
dc.date.accessioned2015-11-26T00:55:22Z-
dc.date.available2015-11-26T00:55:22Z-
dc.date.issued2015en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070160293en_US
dc.identifier.urihttp://hdl.handle.net/11536/125738-
dc.description.abstract本篇論文由兩個部分組成,包含了低雜訊放大器,以及具傳輸零點濾波器之5/60GHz 雙模態接收機。 第二章會先對低雜訊放大器的設計做探討,利用0.18μm SiGe製程實現一個5.8GHz電感耦合低雜訊放大器,及利用0.15μm PHEMT製程比較不同自偏壓架構的低雜訊放大器對溫度效應的影響。 第三章會說明5/60 GHz雙模態接收機的電路設計。此接收機使用TSMC 0.18-μm CMOS製程,為了能有效的改善頻帶外訊號干擾,在5 GHz訊號路徑中加入具傳輸零點主動射頻通道選擇濾波器。並利用蕭基二極體(ft接近200 GHz)設計被動混頻器來處理60 GHz訊號,以解決電晶體ft在0.18-μm製程中過低的問題。zh_TW
dc.description.abstractThis thesis consists of two parts, including a low noise amplifier and a 5/60 GHz dual-mode receiver with transmission zeros filter. In chapter 2, we describe the low noise amplifier. And then, we use trifilar-type component implementing low noise amplifier in 0.18μm SiGe technology. Otherwise, we use 0.15μm PHEMT technology to discuss temperature effects in two different self-bias architectures of low noise amplifier. Chapter 3 introduces the circuits in 5/60 GHz dual-mode receiver will be illustrated. It is implemented in 0.18-μm CMOS technology. In order to improve the signal interference, we use an active RF filter with transmission zeros on 5GHz path. Furthermore, A passive mixer is designed for 60 GHz signal to solve the insufficient ft problem in 0.18-μm technology by using schottky diode of which the ft is nearly 200 GHz.en_US
dc.language.isozh_TWen_US
dc.subject低雜訊放大器zh_TW
dc.subject主動濾波器zh_TW
dc.subjectlow noise amplifieren_US
dc.subjectactive filteren_US
dc.title最佳化設計低雜訊放大器與具傳輸零點濾波器之微波/毫米波雙模態接收機zh_TW
dc.titleOptimal Design Low Noise Amplifier and Microwave/Millimeter-Wave Dual-Mode Receiver with Transmission Zeros Filteren_US
dc.typeThesisen_US
dc.contributor.department電信工程研究所zh_TW
Appears in Collections:Thesis