標題: | Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD |
作者: | Hsu, MY Tang, SF Chiang, CD Su, CC Wang, LC Kuo, CT 交大名義發表 National Chiao Tung University |
關鍵字: | metal-organic chemical vapour deposition (MOCVD);PL;AFM;quantum dot infrared photodetector (QDIP) |
公開日期: | 1-Mar-2006 |
摘要: | The InAs quantum dot (QD) structures grown on (100) 2 degrees, 6 degrees, 10 degrees, 15 degrees off-angles to (111)A GaAs substrate have been investigated by atomic force microscopy (AFM) and cryogenic photoluminescence (PL). The exact-angle InAs/GaAs is used as the reference sample. The blue shift of PL peak spectra with increasing misoriented scales has also been observed experimentally. In this work, we demonstrated that different off-angle substrates would influence the distribution and uniformity of QD due to variant surface potential energies, which are responsible for the two-stage process (migration and nucleation) of InAs adatoms on the off-angle substrates. (c) 2005 Elsevier B.V All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2005.07.078 http://hdl.handle.net/11536/12583 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2005.07.078 |
期刊: | THIN SOLID FILMS |
Volume: | 498 |
Issue: | 1-2 |
起始頁: | 183 |
結束頁: | 187 |
Appears in Collections: | Conferences Paper |
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