完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Feng, HP | en_US |
dc.contributor.author | Cheng, MY | en_US |
dc.contributor.author | Wang, YL | en_US |
dc.contributor.author | Chang, SC | en_US |
dc.contributor.author | Wang, YY | en_US |
dc.contributor.author | Wan, CC | en_US |
dc.date.accessioned | 2014-12-08T15:17:19Z | - |
dc.date.available | 2014-12-08T15:17:19Z | - |
dc.date.issued | 2006-03-01 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2005.07.062 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12586 | - |
dc.description.abstract | This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. (c) 2005 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | copper plating | en_US |
dc.subject | copper void | en_US |
dc.subject | direct current plating | en_US |
dc.subject | electromigration resistance | en_US |
dc.title | Mechanism for Cu void defect on various electroplated film conditions | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.tsf.2005.07.062 | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 498 | en_US |
dc.citation.issue | 1-2 | en_US |
dc.citation.spage | 56 | en_US |
dc.citation.epage | 59 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000235270500011 | - |
顯示於類別: | 會議論文 |