標題: | Investigation of overpotential and seed thickness on damascene copper electroplating |
作者: | Chen, KW Wang, YL Chang, L Li, FY Chang, SC 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | copper electroplating;plating current density;overpotential;copper seed layer |
公開日期: | 24-二月-2006 |
摘要: | This study found that higher overpotential from higher plating current density and a thinner seed layer resulted in more incorporation of sulfur impurities into a deposited copper film. Our results suggested that the higher plating overpotential resulted in smaller copper grains with more grain boundaries where more impurities were trapped. To achieve a defect-free filling in vias, the optimization of the plating current density and the seed layer thickness was necessary. A copper seed with thickness less than 30 generated a sulfur-rich copper film, while, thickness larger than 200 nm for 0.13-nm technologies, the copper seed led to a poor gapfilling with a void after electroplating. (c) 2005 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.surfcoat.2005.07.007 http://hdl.handle.net/11536/12608 |
ISSN: | 0257-8972 |
DOI: | 10.1016/j.surfcoat.2005.07.007 |
期刊: | SURFACE & COATINGS TECHNOLOGY |
Volume: | 200 |
Issue: | 10 |
起始頁: | 3112 |
結束頁: | 3116 |
顯示於類別: | 會議論文 |