標題: Impact of band gap shrinkage on simulated bifurcation routes in directly modulated semiconductor lasers
作者: Lim, CG
Iezekiel, S
Snowden, CM
光電工程學系
Department of Photonics
公開日期: 15-Feb-2006
摘要: A carrier heating model is derived by taking into account the various temperature processes in the active layer of laser diodes. This model is then used to simulate the static and dynamic characteristics of a directly modulated 1.55 mu m distributed-feedback laser diode. The calculated results are compared with the measured results of this device as obtained in an earlier work [H. F. Liu and W. F. Ngal, IEEE J. Quantum Electron. 29, 1668 (1993)], and this reveals the significant impact of band gap shrinkage on simulated results. This study also shows that the carrier heating model is a self-consistent model that naturally describes the gain suppression phenomena in directly modulated laser diodes. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2173308
http://hdl.handle.net/11536/12620
ISSN: 0021-8979
DOI: 10.1063/1.2173308
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 99
Issue: 4
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000235663100001.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.