Channel-width dependence of low-frequency noise in process tensile-strained n-channel metal-oxide-semiconductor transistors

Abstract

Low-frequency noise measurement in process tensile-strained n-channel metal-oxide-semiconductor field-effect transistors yields the density of the interface states, exhibiting a decreasing trend while decreasing the channel width. This finding corroborates the group of P-b centers caused by the lattice mismatch at (100) Si-SiO2 interface as the origin of the underlying interface states. The inverse narrow width effect appears to be insignificant, substantially confirming the validity of the noise measurement. The present noise experiment therefore points to the enhancement of the tensile strain in the presence of channel narrowing, which in turn reduces the lattice mismatch.