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標題: 前瞻銦鎵鋅氧薄膜電晶體之閘極電應力與自我加熱效應可靠度分析
Investigation on Reliability of Advanced a-InGaZnO Thin Film Transistors under Gate Bias Stress and Self-Heating Effect
作者: 洪宜諼
Hung, Yi-Syuan
施敏
張鼎張
Sze,Simon
Chang, Ting-Chang
電子工程學系 電子研究所
關鍵字: 銦鎵鋅氧薄膜電晶體;閘極電應力;可靠度;焦耳熱;自我加熱效應;InGaZnO;thin film transistors;gate bias stress;Joule-heating;self-heating effect
公開日期: 2015
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT070250110
http://hdl.handle.net/11536/126622
Appears in Collections:Thesis


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