互補式面穿隧場效電晶體之結構設計與低功耗電路應用探討

標題:	互補式面穿隧場效電晶體之結構設計與低功耗電路應用探討 Design of the Complementary Face-Tunneling FET for Ultra-low Power Applications
作者:	趙堉斌 Zhao, Yu-Bin 莊紹勳 Chung, Shao-Shiun 電子工程學系電子研究所
關鍵字:	穿隧電晶體;面穿隧;閘極-源極電容;反向器;靜態隨機儲存記憶體;低功耗;TFET;Face Tunneling;Gate to Drain Capacitance;inverter;SRAM;Low Power
公開日期:	2015
URI:	http://140.113.39.130/cdrfb3/record/nctu/#GT070250105 http://hdl.handle.net/11536/126921
Appears in Collections:	Thesis