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dc.contributor.authorKer, MDen_US
dc.contributor.authorHsu, SFen_US
dc.date.accessioned2014-12-08T15:17:31Z-
dc.date.available2014-12-08T15:17:31Z-
dc.date.issued2006-02-01en_US
dc.identifier.issn0018-9375en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TEMC.2006.870681en_US
dc.identifier.urihttp://hdl.handle.net/11536/12692-
dc.description.abstractDifferent types of board-level noise filter networks are evaluated to find their effectiveness for improving the immunity of CMOS ICs against the transient-induced latchup (TLU) under the system-level electrostatic discharge (ESD) test. By choosing proper components in each noise filter network, the TLU immunity of CMOS ICs can be greatly improved. All the experimental evaluations have been verified with the silicon-controlled rectifier (SCR) test structures and the ring oscillator circuit fabricated in a 0.25-mu m CMOS technology. Some board-level solutions can be further integrated into the chip design to effectively improve the TLU immunity of CMOS IC products.en_US
dc.language.isoen_USen_US
dc.subjectboard-level noise filteren_US
dc.subjectlatchupen_US
dc.subjectSCRen_US
dc.subjectsystem-level ESD testen_US
dc.subjecttransient-induced latchup (TLU)en_US
dc.titleEvaluation on board-level noise filter networks to suppress transient-induced latchup in CMOS ICs under system-level ESD testen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TEMC.2006.870681en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITYen_US
dc.citation.volume48en_US
dc.citation.issue1en_US
dc.citation.spage161en_US
dc.citation.epage171en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000236811700015-
dc.citation.woscount11-
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