MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser

標題:	MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
作者:	Chang, YA Chu, JT Ko, CT Kuo, HC Lin, CF Wang, SC 光電工程學系 Department of Photonics
關鍵字:	metalorganic chemical vapor deposition;InGaAs : Sb;semiconductor;laser diodes;optical fiber devices;VCSELs
公開日期:	25-Jan-2006
摘要:	In0.45Ga0.55As:Sb/GaAs (1.3 mu m) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In0.45Ga0.55As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 mu m with narrow fullwidth at half-maximum (FWHM) of 35.9meV. For the fabricated VCSEL with 5 mu m diameter oxide-confined aperture, a room-temperature (RT).threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 mu m emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz. (c) 2005 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.jcrysgro.2005.10.030 http://hdl.handle.net/11536/12716
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2005.10.030
期刊:	JOURNAL OF CRYSTAL GROWTH
Volume:	287
Issue:	2
起始頁:	550
結束頁:	553
Appears in Collections:	Conferences Paper

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