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dc.contributor.authorChen, JFen_US
dc.contributor.authorHsiao, RSen_US
dc.contributor.authorHung, WKen_US
dc.contributor.authorWang, JSen_US
dc.contributor.authorChi, JYen_US
dc.contributor.authorYu, HCen_US
dc.contributor.authorSu, YKen_US
dc.date.accessioned2014-12-08T15:17:33Z-
dc.date.available2014-12-08T15:17:33Z-
dc.date.issued2006-01-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2164532en_US
dc.identifier.urihttp://hdl.handle.net/11536/12730-
dc.description.abstractThe conduction and interface states of laterally wet-oxidized GaAs-AlGaAs-GaAs structures after various oxidation times are investigated. Effective current blocking is achieved after 150 min oxidation and the conduction of current through the oxidized AlGaAs layer is controlled by the Poole-Frenkel mechanism, from which a relative dielectric constant of 7.07 is obtained. At an oxidation time of 15 min, capacitance-voltage spectra exhibit capacitance dispersion over frequency, implying the presence of an interface state. The intensity of the dispersion increases with increasing the oxidation time and admittance spectroscopy reveals a significant interface state at similar to 0.28 eV at 45 min. Further increasing the oxidation time to 150 min broadens the interface state to a set of continuous interface states from 0.19-0.31 eV with decreasing densities from 3x10(11) to 0.9x10(11) eV(-1) cm(-2) and generates fixed charges of about 9.1x10(11) cm(-2) in the oxidized layer. By comparison to a similar trap in a relaxed InGaAs/GaAs, the interface state is tentatively assigned to the interaction of residual As with dislocations. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleEvolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation timeen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2164532en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume99en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000235014700047-
dc.citation.woscount4-
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