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dc.contributor.author林緯en_US
dc.contributor.authorLin Weien_US
dc.contributor.author張俊彥en_US
dc.contributor.authorChang,Chun-Yenen_US
dc.date.accessioned2015-11-26T01:02:20Z-
dc.date.available2015-11-26T01:02:20Z-
dc.date.issued2015en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079811562en_US
dc.identifier.urihttp://hdl.handle.net/11536/127333-
dc.language.isoen_USen_US
dc.subject快閃記憶體zh_TW
dc.subject數位訊號處理zh_TW
dc.subject錯誤更正碼zh_TW
dc.subjectNAND Flash Memoryen_US
dc.subjectDSPen_US
dc.subjectECCen_US
dc.title應用於深次20奈米快閃記憶體之錯誤處理方法zh_TW
dc.titleAdvance Error Handling for Deep Sub-20nm NAND Flash Memoryen_US
dc.typeThesisen_US
dc.contributor.department電子工程學系 電子研究所zh_TW
Appears in Collections:Thesis