運用介電層熔斷崩潰機制設計新穎的單次寫入唯讀記憶體

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	黃智宏	en_US
dc.contributor.author	Huang, Zhi-Hong	en_US
dc.contributor.author	莊紹勳	en_US
dc.contributor.author	Chung, Shao-Shiun	en_US
dc.date.accessioned	2015-11-26T01:02:27Z	-
dc.date.available	2015-11-26T01:02:27Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT070250150	en_US
dc.identifier.uri	http://hdl.handle.net/11536/127427	-
dc.language.iso	en_US	en_US
dc.subject	單次寫入唯讀記憶體	zh_TW
dc.subject	互補式電晶體	zh_TW
dc.subject	熔斷	zh_TW
dc.subject	介電層崩潰	zh_TW
dc.subject	隨機電報雜訊	zh_TW
dc.subject	可靠度	zh_TW
dc.subject	OTP	en_US
dc.subject	CMOS	en_US
dc.subject	fuse	en_US
dc.subject	dielectric breakdown	en_US
dc.subject	RTN	en_US
dc.subject	Reliability	en_US
dc.title	運用介電層熔斷崩潰機制設計新穎的單次寫入唯讀記憶體	zh_TW
dc.title	A One-Time-Programmable Array Based on a New Dielectric Fuse Breakdown Mechanism	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子工程學系電子研究所	zh_TW
顯示於類別：	畢業論文