(100)Si基板上之TiO2薄膜氮化為TiN磊晶並作為緩衝層在其上成長鑽石薄膜之研究

標題:	(100)Si基板上之TiO2薄膜氮化為TiN磊晶並作為緩衝層在其上成長鑽石薄膜之研究 The study of diamond growth on Si substrate using an epitaxial TiN buffer layer formed by plasma nitriding of TiO2 film
作者:	莊雅琪 Chuang, Ya-Chi 張立 Chang, Li 材料科學與工程學系所
關鍵字:	氮化鈦;二氧化鈦;矽;鑽石;偏壓輔助成核法;氮化法;Titanium dioxide;Titanium nitride;plasma nitridation;bias enhanced nucleation;atomic layer deposition;silicon
公開日期:	2015
URI:	http://140.113.39.130/cdrfb3/record/nctu/#GT070251541 http://hdl.handle.net/11536/127701
Appears in Collections:	Thesis