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標題: 三維成長之氮化鎵對氮化鋁鎵/氮化鎵高電子遷移率場效電晶體在矽基板(111)之高電壓應用
AlGaN/GaN HEMT with 3D Growth Mode GaN Nucleation Layer on Silicon (111) Substrates for High Voltage Applications
作者: 蕭名堯
Hsiao, Ming-Yao
張翼 馬哲申
Chang, Edward Yi Maa, Jer Shen
照明與能源光電研究所
關鍵字: 氮化鎵 三五族材料 電晶體;GaN III-V material HEMTs
公開日期: 2015
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT070258112
http://hdl.handle.net/11536/127782
Appears in Collections:Thesis


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