標題: Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy
作者: Fan, W. C.
Huang, S. H.
Chou, W. C.
Tsou, M. H.
Yang, C. S.
Chia, C. H.
Nguyen Dang Phu
Luc Huy Hoang
電子物理學系
Department of Electrophysics
關鍵字: Molecular beam epitaxy;Nanomaterials;Zinc compounds;Semiconducting II-VI materials
公開日期: 1-Sep-2015
摘要: Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by low-temperature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 40 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of Zaire QDs grown on ZnSe buffer layers because the strain between ZaTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch\'s stretching exponential well fits the decay profiles of ZaTe/Zn1-xMgxSe QDs. (C) 2015 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.094
http://hdl.handle.net/11536/127834
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2015.02.094
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 425
起始頁: 186
結束頁: 190
Appears in Collections:Articles