標題: Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition
作者: Lin, Meng-Yu
Wang, Cheng-Hung
Chang, Shu-Wei
Lee, Si-Chen
Lin, Shih-Yen
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: graphene;transistors;passivation
公開日期: 29-Jul-2015
摘要: In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. The prepared graphene films in millimeter sizes are then bubbling transferred to silicon-dioxide/silicon substrates for high-mobility graphene transistor fabrications. After high-temperature annealing and hexamethyldisilazane passivation, the water attachment is removed from the graphene channel. The elimination of uncontrolled doping and enhancement of carrier mobility accompanied by these procedures indicate that they are promising for fabrications of graphene transistors.
URI: http://dx.doi.org/10.1088/0022-3727/48/29/295106
http://hdl.handle.net/11536/127856
ISSN: 0022-3727
DOI: 10.1088/0022-3727/48/29/295106
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 48
Issue: 29
Appears in Collections:Articles