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dc.contributor.authorYang, Chi-Hengen_US
dc.contributor.authorLin, Yi-Minen_US
dc.contributor.authorChang, Hsie-Chiaen_US
dc.contributor.authorLee, Chen-Yien_US
dc.date.accessioned2015-12-02T02:59:09Z-
dc.date.available2015-12-02T02:59:09Z-
dc.date.issued2015-07-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TVLSI.2014.2338309en_US
dc.identifier.urihttp://hdl.handle.net/11536/127873-
dc.description.abstractThis paper presents an area-efficient architecture of arbitrary error correction Bose-Chaudhuri-Hocquenghem codec for NAND flash memory. By factorizing the generator polynomial into several minimal polynomials and utilizing linear feedback shift registers based on minimal polynomials, our reconfigurable design cannot only support multiple error correcting capabilities at a few extra cost, but also merge the encoder and syndrome calculator for efficiently reducing hardware complexity. After being implemented in CMOS 65-nm technology, the test chip supporting t = 1-24 bits can achieve 1.33-Gb/s measured throughput with 73k gate-count while another design supporting t = 60-84 bits can provide 1.60-Gb/s synthesized throughput with 168.6k gate-count.en_US
dc.language.isoen_USen_US
dc.subjectBose-Chaudhuri-Hocquenghem (BCH) codesen_US
dc.subjectencoderen_US
dc.subjecterror correcting codes (ECC)en_US
dc.subjectNAND flashen_US
dc.subjectsyndromeen_US
dc.titleAn MPCN-Based BCH Codec Architecture With Arbitrary Error Correcting Capabilityen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TVLSI.2014.2338309en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume23en_US
dc.citation.spage1235en_US
dc.citation.epage1244en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000356879200005en_US
dc.citation.woscount0en_US
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