標題: An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory
作者: Zhang, Wei
Hu, Ying
Chang, Ting-Chang
Chang, Kuan-Chang
Tsai, Tsung-Ming
Chen, Hsin-Lu
Su, Yu-Ting
Chu, Tian-Jian
Chen, Min-Chen
Huang, Hui-Chun
Su, Wan-Ching
Zheng, Jin-Cheng
Hung, Ya-Chi
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RRAM;solid electrolyte;electronic synapse device;spike-timing-dependent plasticity learning (STDP)
公開日期: 1-八月-2015
摘要: The multilevel capability of solid electrolyte resistive random access memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device. By varying the cutoff voltage during the dc I-V cycles or the ac pulse programming voltage amplitudes, continuous multilevel conductance states were obtained. The reference Pt/GeO/TiN RRAM was fabricated to certify the multilevel capability and was due to the character of the GeS solid electrolyte. Finally, the property of gradual conductance states was exploited to demonstrate spike-timing-dependent plasticity learning, which suggests device\'s potential for use as an electronic synapse device for neuromorphic systems.
URI: http://dx.doi.org/10.1109/LED.2015.2448756
http://hdl.handle.net/11536/128001
ISSN: 0741-3106
DOI: 10.1109/LED.2015.2448756
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 36
起始頁: 772
結束頁: 774
顯示於類別:期刊論文