標題: | An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory |
作者: | Zhang, Wei Hu, Ying Chang, Ting-Chang Chang, Kuan-Chang Tsai, Tsung-Ming Chen, Hsin-Lu Su, Yu-Ting Chu, Tian-Jian Chen, Min-Chen Huang, Hui-Chun Su, Wan-Ching Zheng, Jin-Cheng Hung, Ya-Chi Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | RRAM;solid electrolyte;electronic synapse device;spike-timing-dependent plasticity learning (STDP) |
公開日期: | 1-八月-2015 |
摘要: | The multilevel capability of solid electrolyte resistive random access memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device. By varying the cutoff voltage during the dc I-V cycles or the ac pulse programming voltage amplitudes, continuous multilevel conductance states were obtained. The reference Pt/GeO/TiN RRAM was fabricated to certify the multilevel capability and was due to the character of the GeS solid electrolyte. Finally, the property of gradual conductance states was exploited to demonstrate spike-timing-dependent plasticity learning, which suggests device\'s potential for use as an electronic synapse device for neuromorphic systems. |
URI: | http://dx.doi.org/10.1109/LED.2015.2448756 http://hdl.handle.net/11536/128001 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2015.2448756 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 36 |
起始頁: | 772 |
結束頁: | 774 |
顯示於類別: | 期刊論文 |