标题: | An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory |
作者: | Zhang, Wei Hu, Ying Chang, Ting-Chang Chang, Kuan-Chang Tsai, Tsung-Ming Chen, Hsin-Lu Su, Yu-Ting Chu, Tian-Jian Chen, Min-Chen Huang, Hui-Chun Su, Wan-Ching Zheng, Jin-Cheng Hung, Ya-Chi Sze, Simon M. 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | RRAM;solid electrolyte;electronic synapse device;spike-timing-dependent plasticity learning (STDP) |
公开日期: | 1-八月-2015 |
摘要: | The multilevel capability of solid electrolyte resistive random access memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device. By varying the cutoff voltage during the dc I-V cycles or the ac pulse programming voltage amplitudes, continuous multilevel conductance states were obtained. The reference Pt/GeO/TiN RRAM was fabricated to certify the multilevel capability and was due to the character of the GeS solid electrolyte. Finally, the property of gradual conductance states was exploited to demonstrate spike-timing-dependent plasticity learning, which suggests device\'s potential for use as an electronic synapse device for neuromorphic systems. |
URI: | http://dx.doi.org/10.1109/LED.2015.2448756 http://hdl.handle.net/11536/128001 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2015.2448756 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 36 |
起始页: | 772 |
结束页: | 774 |
显示于类别: | Articles |