標題: Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface
作者: Li, Ming-Yang
Shi, Yumeng
Cheng, Chia-Chin
Lu, Li-Syuan
Lin, Yung-Chang
Tang, Hao-Lin
Tsai, Meng-Lin
Chu, Chih-Wei
Wei, Kung-Hwa
He, Jr-Hau
Chang, Wen-Hao
Suenaga, Kazu
Li, Lain-Jong
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 31-Jul-2015
摘要: Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.
URI: http://dx.doi.org/10.1126/science.aab4097
http://hdl.handle.net/11536/128022
ISSN: 0036-8075
DOI: 10.1126/science.aab4097
期刊: SCIENCE
Volume: 349
Issue: 6247
起始頁: 524
結束頁: 528
Appears in Collections:Articles