Title: Enhancement of light emission in GaAs epilayers with graphene quantum dots
Authors: Lin, T. N.
Chih, K. H.
Cheng, M. C.
Yuan, C. T.
Hsu, C. L.
Shen, J. L.
Hou, J. L.
Wu, C. H.
Chou, W. C.
Lin, T. Y.
電子物理學系
Department of Electrophysics
Issue Date: 1-Jan-2015
Abstract: A green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml(-1). On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them.
URI: http://dx.doi.org/10.1039/c5ra09315e
http://hdl.handle.net/11536/128101
ISSN: 2046-2069
DOI: 10.1039/c5ra09315e
Journal: RSC ADVANCES
Volume: 5
Issue: 75
Begin Page: 60908
End Page: 60913
Appears in Collections:Articles


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