標題: | Wettability of electroplated Ni-P in under bump metallurgy with Sn-Ag-Cu solder |
作者: | Lin, YC Duh, JG Chiou, BS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | lead-free solder;electroplated Ni-P;under bump metallurgy (UBM);wettability;interfacial reaction |
公開日期: | 1-一月-2006 |
摘要: | Nickel plating has been used as the under bump metallurgy (UBM) in the microelectronics industry. In this study, the electroplating process was demonstrated to be a good alternative approach to produce the Ni-P layer as UBM. The wettability of several commercial solder pastes, such as Sn-3.5Ag, Sn-37Pb, and Sn-3Ag-0.5Cu solder, on electroplated Ni-P with various phosphorous contents (7 wt.%, 10 wt.%, and 13 wt.%) was investigated. The role of phosphorus in the wettability was probed. The surface morphology and surface roughness in electroplated Ni-P was observed with the aid of both field emission scanning electron microscope (SEM) and atomic force microscope (AFM). The correlation between wettability and phosphorus contents in electroplated Ni-P was evaluated. As the phosphorous contents increased, the surface morphology of the Ni-P deposit was smoother and surface roughness of Ni-P became smaller. The improvement of surface morphology and surface roughness enhanced the wettability of electroplated Ni-P. The interfacial reaction between lead-free solder and electroplating Ni-P UBM was also investigated. |
URI: | http://hdl.handle.net/11536/12815 |
ISSN: | 0361-5235 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 35 |
Issue: | 1 |
起始頁: | 7 |
結束頁: | 14 |
顯示於類別: | 會議論文 |