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dc.contributor.authorYeh, Yen-Hsienen_US
dc.contributor.authorChu, Chung-Mingen_US
dc.contributor.authorWu, Yin-Haoen_US
dc.contributor.authorHsu, Ying-Chiaen_US
dc.contributor.authorYu, Tzu-Yien_US
dc.contributor.authorLee, Wei-Ien_US
dc.date.accessioned2015-12-02T02:59:32Z-
dc.date.available2015-12-02T02:59:32Z-
dc.date.issued2015-08-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/30/8/085002en_US
dc.identifier.urihttp://hdl.handle.net/11536/128319-
dc.description.abstractIn this paper, based on the anisotropic nature of hydrogen (H-2) etching on GaN, we describe a new approach to the removal of threading dislocations in GaN layers. The top surfaces of c-plane (Ga-face) and a-plane GaNs are considered stable in H-2; therefore, H-2 etches only crystal imperfections such as dislocation and basal plane stacking fault (BSF) sites. We used H-2 to etch undoped c-plane GaN, n-type c-plane GaN, a-plane GaN, and an InGaN/ GaN multiple quantum well structure. Several examinations were performed, indicating deep cavities on the c-plane GaN samples after H-2 etching; furthermore, gorge-like grooves were observed on the a-plane GaN samples. The deep cavities on the c-plane GaN were considered the etched dislocation sites, and the gorge-like grooves on the a-plane GaN were considered the etched BSF sites. Photoluminescence measurements were performed and the results indicated that the H-2-etched samples demonstrate superior optoelectronic properties, probably because of the elimination of dislocations.en_US
dc.language.isoen_USen_US
dc.subjecthydrogen etchingen_US
dc.subjectdislocationen_US
dc.subjectbasal plane stacking faulten_US
dc.subjectsemiconducting III-V materialen_US
dc.titleUse of hydrogen etching to remove existing dislocations in GaN epitaxial layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/30/8/085002en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume30en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000362272600004en_US
dc.citation.woscount0en_US
Appears in Collections:Articles