完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li, SY | en_US |
dc.contributor.author | Lee, CY | en_US |
dc.contributor.author | Lin, P | en_US |
dc.contributor.author | Tseng, TY | en_US |
dc.date.accessioned | 2014-12-08T15:17:41Z | - |
dc.date.available | 2014-12-08T15:17:41Z | - |
dc.date.issued | 2006-01-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.2151217 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12833 | - |
dc.description.abstract | Gate-controlled field-emission devices have great promise for a number of applications such as bright electron source or flat display array. The gate-controlled ZnO nanowire (NW) field-emission device was fabricated using lift-off fabrication process to synthesize side-gate control in the present investigation. This device effectively controls the turn-on electron beams and switches the drain current (Id) under a threshold gate voltage (V-T) of similar to 35 V. In the meantime, the current density of the device is similar to 1 mA/cm(2) that is similar to carbon nanotube (CNT) field-emission level with a potential for the design of field-emission display (FED) devices. Furthermore, when the gate voltage (V-g) is equal to 0 V, the turn-on electric field (E-to) for ZnO NWs is similar to 0.8 V/mu m and the effective-field-enhancement factor 8 is similar to 7000. As Vg is increased to 10, 20, 30, and 40 V, the E, lowers to the range of -0.8-0.6 V/mu m and the 8 value increases to similar to 7600-17 800. The continuous increases in V,, lowers the turn-on electric field because the local electric field (E-local) generated induces an extra force that enhances electron emission from the ZnO NWs. Besides, the transconductance (g) value can approach 0.388 mS while the V-g is increased to 44.5 V. The devices have well-controlled behavior and exhibit better Fowler-Nordheim characteristic in comparison with classic CNT field-emission devices. The gated ZnO NW array has a good opportunity to be applied to FED devices and be integrated to the semiconductor industry in the future. (c) 2006 American Vacuum Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Gate-controlled ZnO nanowires for field-emission device application | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1116/1.2151217 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 24 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 147 | en_US |
dc.citation.epage | 151 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000235845900026 | - |
dc.citation.woscount | 25 | - |
顯示於類別: | 期刊論文 |