The reliability study of III-V solar cell with copper based contacts

doi:10.1016/j.sse.2015.09.017

標題:	The reliability study of III-V solar cell with copper based contacts
作者:	Hsu, Ching-Hsiang Chang, Edward Yi Chang, Hsun-Jui Maa, Jer-Shen Pande, Krishna 材料科學與工程學系照明與能源光電研究所電子工程學系及電子研究所 Department of Materials Science and Engineering Institute of Lighting and Energy Photonics Department of Electronics Engineering and Institute of Electronics
關鍵字:	Reliability;III-V concentrator solar cell;Copper metallization;Low cost
公開日期:	1-Dec-2015
摘要:	The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10(-6) Omega cm(2). The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 degrees C) and a high DC current (6.5 x 10(-4) mA/mu m(2)) stress test. Overall, the solar cell adopting these Cu-based contacts remained quite stable and demonstrated excellent performances after these reliability tests. (C) 2015 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2015.09.017 http://hdl.handle.net/11536/128368
ISSN:	0038-1101
DOI:	10.1016/j.sse.2015.09.017
期刊:	SOLID-STATE ELECTRONICS
Volume:	114
起始頁:	174
結束頁:	177
Appears in Collections:	Articles