完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, YM | en_US |
dc.contributor.author | Tu, GC | en_US |
dc.contributor.author | Wang, YL | en_US |
dc.contributor.author | Hwang, GJ | en_US |
dc.contributor.author | Lo, CY | en_US |
dc.date.accessioned | 2014-12-08T15:17:41Z | - |
dc.date.available | 2014-12-08T15:17:41Z | - |
dc.date.issued | 2006-01-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.2141626 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12837 | - |
dc.description.abstract | In this study, the thermal stability of polysilicon lines with various widths and different dopant types in 90-nm processes is investigated. The thermal behavior of silicides formed on N+ polyresistors and P+ polyresistors is very different. The worst thermal stability is found on the narrower N+ polyresistors, while an abnormal thermal behavior is observed on P+ polyresistors. This anomalous thermal-stability change with different drawn linewidths of P+ polyresistors is related to the C Grain-size distribution and the actual polyresistor linewidth. Also, it is interesting to find that the voids formed in P+ polyresistors lead to a stepped increase in sheet resistance. (c) 2006 American Vactatin Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | CoSix thermal stability on narrow-width polysilicon resistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1116/1.2141626 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 24 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 83 | en_US |
dc.citation.epage | 86 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000235845900014 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |