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dc.contributor.authorShih, Jian-Yuen_US
dc.contributor.authorChen, Yen-Chien_US
dc.contributor.authorChiu, Chih-Hungen_US
dc.contributor.authorLo, Chung-Lunen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2015-12-02T03:00:54Z-
dc.date.available2015-12-02T03:00:54Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-4799-2217-8en_US
dc.identifier.issnen_US
dc.identifier.urihttp://hdl.handle.net/11536/128531-
dc.description.abstractA novel Si-based X\'tal oscillator device (1.2 mm x 1.0 mm) is demonstrated by using 3D integration technologies. It is distinct from conventional X\'tal oscillator device with ceramics and metal lid. The novel Si-based X\'tal oscillator device shows no leakage path, and passes the hermetic encapsulation test and reliability investigation. In addition, the novel device shows the excellent electrical characteristics and provides the possibility to replace the conventional fabrication approach for the next generation products.en_US
dc.language.isoen_USen_US
dc.titleA Novel Si-based X'tal Oscillator Device Using 3D Integration Technologiesen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000358865800054en_US
dc.citation.woscount0en_US
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