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dc.contributor.authorKing, M. C.en_US
dc.contributor.authorChang, C. F.en_US
dc.contributor.authorLin, H. J.en_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:17:42Z-
dc.date.available2014-12-08T15:17:42Z-
dc.date.issued2006en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/12857-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2354447en_US
dc.description.abstractIn this paper, we have compared the performance of metal-insulator-metal (MiM) capacitors for different bottom electrode materials including Cu, TaN, and Al in Cu-back-end-of-the-line (BEOL) process. A high-performance and low-defect-density MiM capacitor for mixed-signal and radio frequency (MS/RF) technology based on a 130 nm complementary metal oxide semiconductor (CMOS) process was demonstrated. Q-factor can achieve > 100 for both Cu and Al at 2.4 GHz with 0.7 pF MiM capacitors. TaN showed a low Q-factor (< 60) due to high resistivity. The process incorporates aluminum electrode into Cu BEOL for MiM capacitor with a cost-effective process. The roughness of electro-dielectric interface by a thin aluminum electrode is critical for MiM performance due to field enhancement by roughness of a thin aluminum electrode. We have demonstrated a way to eliminate the roughness effect of thin Al and provide a MiM capacitor with high performance and low defect density. In particular, a method is demonstrated to achieve better matching, leakage, electrical breakdown, and temperature coefficient of capacitance performance for MiM capacitors. (c) 2006 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleComparison of MiM performance with various electrodes and dieletric in Cu dual damascene of CMOS MS/RF technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2354447en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume153en_US
dc.citation.issue12en_US
dc.citation.spageG1032en_US
dc.citation.epageG1034en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000241757400063-
dc.citation.woscount2-
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