標題: 2D Numerical Simulation for InGaP/GaAs HBT Safe Operating Area
作者: Lin, Bo-Rong
Tao, Nick G. M.
Lee, Chien-Ping
Henderson, Tim
Lin, Barry J. F.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: HBT;safe operating area;TCAD;simulation
公開日期: 1-Jan-2014
摘要: The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different dominant mechanisms, which is in good agreement with analytical modeling and experimental results. The simulation not only gives us insight to the detailed failure mechanisms but also provides guidance for the design of devices with better ruggedness and improved SOA performances.
URI: http://hdl.handle.net/11536/128584
ISBN: 978-2-87487-036-1
ISSN: 
期刊: 2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC)
Appears in Collections:Conferences Paper