A quantum trap MONOS memory device using AlN

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DC 欄位	值	語言
dc.contributor.author	Lai, CH	en_US
dc.contributor.author	Wu, CH	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Wang, SJ	en_US
dc.contributor.author	McAlister, SP	en_US
dc.date.accessioned	2014-12-08T15:17:43Z	-
dc.date.available	2014-12-08T15:17:43Z	-
dc.date.issued	2006	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12863	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.2208742	en_US
dc.description.abstract	We report a IrO2-HfAlO-AlN-SiO2-Si MONOS device that displays excellent characteristics in terms of speed (100 mu s at +/- 13 V for program/erase) and memory window (3.7 V) at 85 degrees C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85 degrees C. The achieved performance compares well with the best reported memory device data. (c) 2006 The Electrochemical Society.	en_US
dc.language.iso	en_US	en_US
dc.title	A quantum trap MONOS memory device using AlN	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.2208742	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	153	en_US
dc.citation.issue	8	en_US
dc.citation.spage	G738	en_US
dc.citation.epage	G741	en_US
dc.contributor.department	奈米科技中心	zh_TW
dc.contributor.department	Center for Nanoscience and Technology	en_US
dc.identifier.wosnumber	WOS:000238470100059	-
dc.citation.woscount	2	-
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