標題: | Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation |
作者: | Tu, Chun-Hao Chang, Ting- Chang Liu, Po-Tsun Chen, Chih-Hung Yang, Che-Yu Wu, Yung-Chun Liu, Hsin-Chou Chang, Li-Ting Tsai, Chia-Chou Sze, Simon M. Chang, Chun-Yen 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
公開日期: | 2006 |
摘要: | Solid phase recrystallized polycrystalline silicon thin-film transistors (SPC poly-Si TFTs) with fluorine ion implantation were investigated in this study. Electrical characteristics and reliability of the proposed poly-Si TFTs were improved effectively, especially for field effect mobility and off current. The fluorine-ion-implanted poly-Si TFT can suppress the hot carrier multiplication near the drain side, leading to superior endurance to electrical stress compared with conventional poly-Si TFTs. It was found that fluorine ions will pile up at the poly-Si interface during thermal annealing, without the initial deposition of pad oxide. The proposed technology is manageable and compatible with conventional poly-Si TFT fabrication. As the ion dosages increase more than 5x10(15) cm(-2), however, the electrical characteristics of poly-Si TFTs were degraded due to the increase of trap state density caused by the fluorine segregation in the poly-Si film. |
URI: | http://hdl.handle.net/11536/12864 http://dx.doi.org/10.1149/1.2214468 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.2214468 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 153 |
Issue: | 9 |
起始頁: | G815 |
結束頁: | G818 |
顯示於類別: | 期刊論文 |