標題: MULTI-PORT SRAM WITH SHARED WRITE BIT-LINE ARCHITECTURE AND SELECTIVE READ PATH FOR LOW POWER OPERATION
作者: HWANG Wei
WANG Dao-Ping
公開日期: 18-Jun-2015
摘要: A multi-port SRAM with shared write bit-line architecture and selective read path for low power operation includes a first memory cell, a second memory cell, and a common switch set. The second memory cell makes use of the common switch set to share the A-port write bit-line and the B-port write bit-line with the first memory cell so as to reduce half write bit-line number and reduce the write current consumption caused by pre-charging the bit-line to VDD. It also provides a selective read path structure for read operation. Replacing the ground connection in the read port with a virtual VSS controlled by a Y-select signal reduces read-port current consumption.
官方說明文件#: G11C011/412
URI: http://hdl.handle.net/11536/128671
專利國: USA
專利號碼: 20150170734
Appears in Collections:Patents


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